Table 1 Main P-RAM performance comparison
From: Electrical programmable multilevel nonvolatile photonic random-access memory
Material | Programming method | to Energy (nJ/dB) | ER (dB/µm) | Unit IL (dB/µm) | Performance (i.e., ER/IL) | Implementation complexity | Writing–Resetting cycles |
|---|---|---|---|---|---|---|---|
GST 23 | Optical absorption | 1.0 | 0.8 | 0.02 | 40 | High | 5000 |
Doped silicon heater | 7.6 | 0.2 | 0.04 | 13 | Medium | 3800 | |
GSSe (This work) | On-chip integrated heater | 1.5 | 0.2 | <0.002 | 70 | Low | ~500,000 |
