Table 1 Comparison of recent QD mode-locked laser on various material platforms and structures
Telecom band | Material platform | Method | Pulse width (ps) | Repetition rate (GHz) | Optical bandwidth | Operation temperature | Ref. | |
|---|---|---|---|---|---|---|---|---|
AM | FM | |||||||
C-band | InAs/InP QD | Single-section | 0.295 | 10–100 | 17.9 (–3 dB BW) | 18 | ||
C-band | InAs/InP QD | Single-section | 0.6 | 34.2 | 11.96 (–6 dB BW) | 18 | ||
C-band | InAs/InP QD | Single-section | 32.5 | 11.8 (–3 dB BW) | 25 | |||
O-band | InAs/InGaAs on Si | Single-section | 0.49 | 31 | 20 | |||
O-band | InAs/GaAs QD on Si | Two-section | 5 | 20 | 6.1 (−3 dB BW) | 18 | ||
O-band | InAs/GaAs QD | Two-section | 4.9 | 25.5 | 4.7 (−6 dB BW) | 20–120 | ||
O-band | InAs/GaAs QD | CPM | 0.81 | 100 | 11.5 (−3 dB BW) | 25–100 | ||
O-band | InAs/GaAs QD on SOI | CPM (external cavity) | 102 | 6.5 (–3 dB BW) | 25 | |||
O-band | InAs/GaAs QD on SOI | CPM (external cavity) | 15.5 | 12 (–3 dB BW) | 23 | |||
O-band | InAs/GaAs QD | CPM | 1.7 | 0.495 | 60 | 12.1 (–3 dB BW) | 20–45 | This work |
