Table 1 Performances of various state-of-the-art thin film LN modulators
From: High-speed electro-optic modulation in topological interface states of a one-dimensional lattice
Structures | Footprint | VπL/tuning efficiency | Extinction ratio | Bandwidth | Vpp | Data rate | Energy consumption |
|---|---|---|---|---|---|---|---|
LN MZI on silicon1 | 100 × 20000 μm2 | 2.8 Vcm | 30 dB | 45 GHz | 0.2 V | 70 Gb/s | / |
Hybrid LN-silicon MZI4 | ~100 × 3000 μm2 | 2.2 Vcm | 40 dB | >70 GHz | 4 V | 100 Gb/s OOK | 170 fJ/bit |
LN MZI on quartz8 | 175 × 20,000 μm2 | 2.6 Vcm | 20 dB | >100 GHz | / | / | / |
Ring-assisted MZI9 | 700 × 3400 μm2 | 0.35 Vcm | 20 dB | >67 GHz | 0.75 V | 224 Gb/s PAM-4 | 2.7 fJ/bit |
Racetrack10 | 100 × 450 μm2 | 7 pm/V | 6.5 dB | 30 GHz | 5.66 V | 40 Gb/s NRZ | 240 fJ/bit |
Racetrack SiN loaded LN11 | 600 × 210 μm2 | / | 9 dB | / | / | 70 Gb/s NRZ | 212 fJ/bit |
Bragg grating45 | 10 × 400 μm2 | / | 53.8 dB | 60 GHz | 0.9 V | 100 Gb/s NRZ | / |
BIC photonic crystal46 | 2.1 × 123 μm2 | 1.5 pm/V | / | 28 GHz | / | / | / |
FP cavity12 | 4 × 500 μm2 | 7 pm/V | 20 dB | >110 GHz | 2 V | 100 Gb/s OOK | 4.5 fJ/bit |
Photonic crystal5 | 1.2 × 30 μm2 | 16 pm/V | 11.5 dB | 17.5 GHz | 2 V | 11 Gb/s NRZ | 22 fJ/bit |
Topological modulator (this work) | 1.6 × 140 μm2 | 11 pm/V | 32 dB | 104 GHz | 2 V | 100 Gb/s NRZ 100 Gb/s PAM-4 | 5.4 fJ/bit |
