Fig. 3: Device fabrication and characterization.
From: Chip-integrated metasurface full-Stokes polarimetric imaging sensor
a–e Schematic of device fabrication and experimental characterization. a Schematic of the device fabrication process. 1: fused silica wafer, 2: SiOx spacer layer, 3: VCDG,4: SiOx capping layer, 5: spin coated ultra-violet (UV) resist onto the CMOS imaging sensor, 6: CMOS imaging sensor. b The microscopic photograph(left) and the SEM image of one super pixel among the fabricated MPFA (right), scale bar:10 μm. 90°,45°,0°,135° LCP, and RCP on each sub-Fig indicate the polarization state each metasurface filter transmits. Scale bar: 500 nm (white). The size of CP and LP micro-filters are 6.2 µm by 6.2 µm, with spacing 4.65 µm between adjacent filters to minimize crosstalk. c Measured transmission and LPER of fabricated VCDG. d, e Measured transmission and CPER of the chiral metasurface at 530–700 nm and 480 nm-530 nm, respectively. Legend TRCP, TLCP indicate the transmission ratio at their correspondent input CP handedness. Red shadow region indicates the wavelength range for CPER over 10. Blue shadow region indicates the wavelength range for CPER over 2
