Fig. 2: Performance of OFET array and phototransistors based on PAA and PA.

a Schematic diagram of the device structure of OFET. b Physical diagram of device arrays. c Distribution of PAA-based OFET arrays mobilities. d Photocurrent of PAA-based phototransistor measured under different illumination intensities in the air. e Photocurrent of PA-based phototransistors measured under different illumination intensities in the air. f P, R, and D* as a function of illumination intensity using PA and PAA as the dielectric layers with different semiconductors. The values and error bars in f were the mean value and standard deviation obtained with 10 OPT devices. Temperature-dependent photoluminescence (PL) spectra for DNTT/PAA (g) and DNTT/PA films (h) excited at 400 nm