Fig. 1: Schematic of device with absorptivity and emissivity measurements in the absence of an external magnetic field.
From: Broadband nonreciprocal thermal emissivity and absorptivity
a Schematic of the gradient-ENZ structure. The carrier concentration increases for layers closer to the surface of the device (i.e., in the increasing x-direction). A very degenerately doped n++ InAs layer is used as a back reflector. The back reflector layer thickness is to scale. b Absorptivity (red), emissivity (blue), and simulated (black) spectra for the structure at θ = 60°. The resonant absorption/emission associated with each layer are labeled. c Spectral directional emissivity data taken with the sample heated to 100 °C. d Spectral directional absorptivity data taken at ambient (25 °C). Full spectral directional data (including simulations) are included in Fig. S1
