Fig. 2: Characteristics of the BPVE in Bi/Au-based 3R-MoS2 devices.
From: Boosting bulk photovoltaic effect in transition metal dichalcogenide by edge semimetal contact
a The I–V curves of the TC and EC 3R-MoS2 devices. The laser wavelength is 488 nm and the power is 395 μW. Inset: magnified optical micrographs of the prepared devices with red dots indicating the laser illumination positions for. Scale bars: 10 μm. b, c 3R-MoS2 layer thickness-dependence of the BPVE photocurrent (b) and photovoltage (c) for both the TC and EC devices. d The spatial photocurrent mapping for the TC and EC devices and the illumination position dependences of Isc corresponding to the marked dotted light-blue lines. The laser wavelength is 532 nm and the power is 3 μW
