Fig. 2: Simulation of the CQD VCSEL and CBR laser.
From: Low-threshold surface-emitting colloidal quantum-dot circular Bragg laser array
a The structure of CQD VCSEL. The squared electric field intensity (|E|2) distribution in b X-Z plane and c along Z axis within the VCSEL. The V, Γ of VCSEL are calculated to be ~38*(λ/n)3 and 39%, respectively. d The structure of CQD CBR laser. The |E|2 distribution in e X-Y plane and f along Y axis within the CBR laser. The V, Γx (or Γxy) of CBR laser are calculated to be about 3*(λ/n)3 and 95%, respectively. g The |E|2 distribution in X-Z plane within the CBR laser, where |E|2 is in the logarithmic scale. Vertical emission from the CBR center can be observed. h The |E|2 distribution along the Z-axis within the CBR laser. The Γz of CBR laser is ~94%. i The λ-dependent FP in VCSEL and CBR laser. j The table summarizes the Γ, V, and peak FP in VCSEL and CBR laser
