Table 2 High-Q absorbing/ thermal emitting devices
Mode | Q (exp.) | λ (μm) | Structure | Efficiencya | Polarization selective | Size | Ref. |
|---|---|---|---|---|---|---|---|
BICs | 120 | 9.1 | GaAs-AlGaAs PhCs | 71% (E) | No | 1.8 × 1.8 mm² | |
282 | 1.237 | Ge-SiO2-Si metasurfaces | 66.5% (A) | Yes | 120 × 120 μm² | ||
84 | 1.8-10 | Au-resist metasurfaces | 60% (A) | Yes | 160 × 160 μm² | ||
81 | 6.7 | Ge metasurfaces-Al2O3-Au | 30% (E) | Yes | >50 × 50 μm² | ||
45 | 6 | Au metasurfaces-CaF2-Au | 80% (A) | Yes | 115 × 115 μm² | ||
66 | 0.832 | Ag metasurfaces-Al2O3-Ag | 35% (A) | Yes | Unmentioned | ||
GMRs | 72 | 9.2 | GaAs PhCs | 74% (E) | No | 1.8 × 1.8 mm² | |
229 | 5.78 | Ge gratings-Al2O3-Au | 35% (E) | Yes | Unmentioned | ||
118 | 3.532 | W gratings | 55% (E) | No | >100 × 100 μm² | ||
100 | 11.36 | SiC gratings | 94% (E) | Yes | 50 × 50 μm² | ||
73 | 3.722 | Au metasurfaces | 99% (A) | No | 2 × 2 mm² | ||
180 | 0.8 | Si metasurfaces | 22% (A) | Yes | 43 × 37 μm² | ||
101 | 10.9 | Ge gratings-SiC | 84% (E) | Yes | 0.8 × 0.8 cm² | ||
SLRs | 300 | 0.77-0.9 | TiO2 metasurfaces-Au | 93% (A) | Yes | Unmentioned | |
63 | 0.75 | Au metasurfaces | 90% (A) | No | 300 × 300 μm² | ||
Tamm plasmon polaritons | 1120 | 1.55 | Au-DBR (Si/ SiO2) | 92% (A) | No | / | |
780 | 4.57 | DBR (Ge/ SiO2)-Pt | 36% (E) | No | / | ||
172 | 4.1 | cGST-DBR (Ge/ ZnS)-ZnS-Ge-Au | 65% (E) | No | / | ||
88 | 4.731 | DBR (Ge/ SiO2)-SiO2-Au | 90% (E) | No | / | ||
170 | 12.9 | SiC metasurfaces | 78% (A) | No | Unmentioned | ||
164 | 10 | hBN/α-MoO3-Au | 36% (E) | Yes | ≤200 × 200 μm² | ||
33 | 5.83 | Au metasurfaces-SiO2-Au | 99.7% (A) | No | 100 × 100 μm² |
