Table 3 Summary of integrated III–V devices discussed herein
From: Advancements in transfer printing techniques and their applications in photonic integrated circuits
Time | Device | Integration platform | Crucial parameter | TP tool | Ref. |
|---|---|---|---|---|---|
2019 | C-band SOA | Si | Gain = 17 dB, on-chip peak output power = 10 dBm@170 mA | X-Celeprint μTP-100 | |
2020 | C-band SOA | Si | Gain = 23 dB, on-chip saturation power = 9.2 mW@140 mA (high Γ) Gain = 17 dB, on-chip saturation power = 15 mW@160 mA (low Γ) | X-Celeprint μTP-100 | |
2023 | SOA@ 1573 nm | Si | Gain = 9.4 dB, output saturation power = 15.4 dBm@ 114 mA (left), 140 mA (right) | / | |
2020 | SOA@ 1550 nm | SiN | Gain = 14 dB, output saturation power = 8 mW@120 mA | X-Celeprint μTP-100 | |
2012 | Fabry-Perot laser@ 824 nm | Si | Modulation bandwidth >3 GHz, total optical power >60 mW, operating temperature >100 °C | PDMS stamp with well-defined posts | |
2012 | Membrane reflector VCSEL | Si | Output power ~10 μW, power efficiency <0.1% | PDMS stamp | |
2018 | DFB laser@ 1550 nm | Si | SMSR > 40 dB, waveguide-coupled output power = 2.2 mW@70 mA | X-Celeprint μTP-100 | |
2023 | Co-integration of DFB laser and OPA | Si | SMSR > 28 dB, waveguide-coupled output power = 14 dBm@270 mA | PDMS stamp with a single post with 40 µm × 1200 µm | |
2022 | Narrow-linewidth laser | Si | Wavelength tuning scope >100 nm | X-Celeprint μTP-100 | |
2023 | O-band QD-laser | SOI/SiN | Waveguide-coupled power = 1 mW@85 mA (220 nm SOI), 0.95 mW@85 mA (300 nm SiN), 1.7 mW@85 mA (3 μm SOI) | Single PDMS stamp | |
2021 | VCSEL@ 850 nm | SiN | SMSR >45 dB, waveguide-coupled output power >100 μW | X-Celeprint μTP-100 | |
2022 | GaAs photo-detector | Glass | Response time = 2.5 ms, recovery time = 8 ms, responsivity >104 A W−1, detectivity >1014 Jones, external quantum efficiency >106, photoconductive gain >104@1 V | PI interlayer | |
2023 | InGaAs photo-detector | SOI | Responsivity = 0.6 A W−1@48 nA dark current, 3-dB bandwidth = 17.5 GHz | PDMS stamp with post size of 20 × 50 µm2 | |
2016 | LED | SOI | 3-dB bandwidth = 130 nm | Patterned PDMS stamp with posts | |
2024 | O-band InP-InGaAs photodiode | SiN | Responsivity = 0.9 A W−1@ −3 V, 1310 nm | / | |
2024 | EAM@ 1550 nm | SOI | Electrical bandwidth = 40 GHz, ER = 30 dB@−6–0 V | 80 × 500-μm2 PDMS stamp | |
2023 | TFLN modulator | SiN | Half voltage = 14.8 V, insertion loss = 3.3 dB, ER = 39 dB, 3-dB bandwidth >50 GHz | / | |
2024 | TFLN ring modulator | Si | Insertion loss = −1.5 dB, ER = −37 dB, electro-optical bandwidth = 16 GHz, modulation rate = 45 Gbit s−1 | / | |
2025 | TFLN-on-MZI modulator | SiN | Half voltage = 3.2 V, propagation loss = 0.9 dB cm−1, transition loss = 1.8 dB facet−1 | PDMS stamp | |
2025 | TFLN micro-ring optical filter | SiN | 3-dB bandwidth = 1.2 GHz, tuning efficiency = 2 pm V−1, response time <3 ns, static ER > 20 dB, Q-factor = 105 | A PDMS stamp with a racetrack-shaped post | |
2022 | MZI switch | Si | Optical gain = 10 dB, 3-dB bandwidth >30 nm @SOA, improvement of optical cross-talk suppression = 56 dB | X-Celeprint μTP-100 | |
2025 | Cascaded TFLN optical switch | SiN | 3-dB bandwidth >100 nm, crosstalk <−45 dB, response time <3 ns | / |
