Fig. 4: Characterization of O-band RT modulator.
From: The plasmonic BTO-on-SiN platform – beyond 200 GBd modulation for optical communications
a Schematic of the O-band RT modulator with a 5 µm long plasmonic phase shifter. b On-chip transmission as a function of wavelength and bias voltage. The modulator features a quality factor Q of 1931 and less than 2 dB on-chip loss. c Optical microscope image of the fabricated RT. d Normalized modulation response in the upper and lower sidebands of the optical carrier in the on-state as a function of frequency
