Fig. 5: Multifunctional polarization imaging of the b-As0.2P0.8 phototransistor.
From: Polarization-sensitive neuromorphic vision sensing enabled by pristine black arsenic-phosphorus
a Schematic diagram of the 2D scanning imaging system. b Semi-concealed imaging of the letters ‘AsP’ under parallel and perpendicular polarizations at 1550 nm illumination, where the high-resistance silicon wafer obscures “sP”. c The Stokes parameter calculation based on the b-As0.2P0.8 device. d Linear polarization imaging with four different polarization angles 0°, 45°, 90°, and 135° and the DoLP imaging results of the device. All demonstrations were performed at the 1550 nm laser
