Fig. 1: Multiple IX emission in a MoS2/WSe2 heterobilayer.
a Schematic of MoS2/WSe2 heterobilayer showing an IX formed across the interface (upper) and twist angle of θ between two monolayers (lower). b DFT-calculated distribution of hole (left) and electron (right) states in a 0° aligned heterobilayer at the K and Γ valleys. c Energy diagram illustrating type-II band alignment with multiple IX emission process. d Infrared PL emission from the 0.2° heterobilayer at room temperature under different incident photon energies at a constant absorbed photon density of 1.8 × 1012 cm−2. e IX PL quantum yield as a function of pump photon energy (normalized to \({E}_{g\left({\rm{type}}-{\rm{II}}\right)}\) of 1 eV). The dashed line is a fit using a MEG model (Supplementary Note 1) to extract IXM efficiency \({\eta }_{{\rm{IXM}}}\). Error bars represent the uncertainty in PL intensity determination
