Fig. 2: Photocarrier dynamics in twisted MoS₂/WSe₂ heterobilayers.

a Schematic of the pump−probe configuration showing the individual K points of both materials and the hybridized Γ point, with probe energy tuned to the band-edge transitions of MoS₂ and WSe₂, respectively. The arrows illustrate the hot carrier transfer (CT) pathways for K-K and K-Γ IX formation. b 2D color plot of TA spectra of 0.2° heterobilayer following 2.48 eV photoexcitation. c PB dynamics at the MoS₂ and WSe₂ band edges for individual monolayers and the 0.2° heterobilayer under 2.48 eV excitation. d Twist-angle dependence of hole (top) and electron (bottom) population dynamics for IX states, with solid lines representing exponential fits. e Recombination lifetimes of IX electrons (solid circles) and holes (hollow squares) as a function of twist angle for excitation above the multiplication threshold, compared with reported multiple exciton lifetimes in other materials^{13,15,39,40,41,42,43,44,45,46,47}. Complete TA dynamics and fitting parameters are provided in Supplementary Fig. 8 and Tables S2–S5. f Comparison of key MEG parameters between MoS₂/WSe₂ heterobilayers (HBs) and representative materials^{12,15,16,46,47}. PVK perovskite, QD quantum dot, BP black phosphorus