Fig. 3: Twist-angle dependent IXM in MoS2/WSe2 heterobilayers.
a Schematic of the IX QY determination by pump-fluence dependent TA. Probe pulses selectively monitor electrons at the MoS2 CBM and holes at the WSe2 VBM. b \(\Delta {T}_{\max }/{T}_{0}\) as a function of absorbed pump fluence at various photon energies for the 0.2° heterobilayer. Solid lines are linear fits whose slopes correspond to the carrier QY. c Extracted QY for IX electrons (upper panel) and holes (lower panel) as a function of pump photon energy (normalized to \({E}_{g\left({\rm{type}}-{\rm{II}}\right)}\) of 1 eV). Error bars represent uncertainties in QY determined from the linear fits in (b) and Supplementary Fig. 6. d IXM efficiency, threshold and charge transfer (CT) time as functions of twist angle under 3.1 eV photoexcitation. Inset: Schematic representation of the twist angle in momentum space
