Fig. 2: Performance characteristics of nanowire PhC micro-LED under different surface passivation conditions.
From: High efficiency, high color purity red micro-light-emitting diodes
a Schematic of the InGaN/GaN micro-LED device structure. b Current-voltage characteristics of the devices from Sample A, B and C. c Normalized EL spectra of the devices from Sample A, B and C. d Current-dependent EL spectra for the micro-LED from Sample A. e The optical microscope image of the red-emitting micro-LED under injection currents of 0.36 A/cm2, 1.85 A/cm2, 5.9 A/cm2 and 7.8 A/cm2
