Fig. 5 | NPG Asia Materials

Fig. 5

From: Towards sensitive terahertz detection via thermoelectric manipulation using graphene transistors

Fig. 5The alternative text for this image may have been generated using AI.

a–c Photoconductive mode. a Voltage responsivity of the device as a function of bias voltage UAD operating in the photoconductive mode at 0.12 THz. b Johnson-noise limited NEP vs. electrical bias UAD. c Response spectrum of the photoconductive mode, where UAD is 0.6 V. d–f Photovoltaic/direct photocurrent mode with bias-field configuration: d Voltage responsivity as a function of electrical bias voltage UAB. e Corresponding NEP in the Johnson-noise limit. f Response spectrum of the photovoltaic/direct photocurrent mode, where UAB is 0.5 V

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