Fig. 15: Ionic liquid gating induced carrier delocalization. | NPG Asia Materials

Fig. 15: Ionic liquid gating induced carrier delocalization.

From: Recent progress in the phase-transition mechanism and modulation of vanadium dioxide materials

Fig. 15

a Schematic of an electrical double-layer transistor (EDLT) based on VO2, potentially enabling electrical switching of the MIT between the metallic tetragonal phase and the insulating monoclinic phase. b Electronic phase diagrams of electrostatically and chemically doped VO2 films19. Copyright© 2012 Nature Publishing Group

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