Table 1 PL decay components for AgInS2 NPs and AgInS2/GaSx core/shell NPs

From: Narrow band-edge photoluminescence from AgInS2 semiconductor nanoparticles by the formation of amorphous III–VI semiconductor shells

Sample

 

A1, τ1

A2, τ2

A3, τ3

x 2

AgInS2 (780 nm)

A

1

–

–

1.06

τ/ns

919.0

–

–

AgInS2/Ga2S3 core/shell (585 nm)

A

0.587

0.320

0.093

1.26

τ/ns

1.4

24.8

96.6

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