Table 2 PL decay components for AgInS2/GaSx core/shell NPs synthesized using the modified procedures before and after TOP treatment

From: Narrow band-edge photoluminescence from AgInS2 semiconductor nanoparticles by the formation of amorphous III–VI semiconductor shells

Sample

 

A1, τ1

A2, τ2

A3, τ3

x 2

AgInS2/GaSx core/shell

A

0.339

0.592

0.069

1.24

τ/ns

9.5

52.3

203.4

After TOP treatment

A

0.204

0.704

0.092

1.06

τ/ns

8.8

50.5

157.5

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