Fig. 4: Current-induced magnetization switching of BTO↓ and BTO↑ devices. | NPG Asia Materials

Fig. 4: Current-induced magnetization switching of BTO↓ and BTO↑ devices.

From: Tuning of current-induced effective magnetic field through Rashba effect engineering in hybrid multiferroic structures

Fig. 4: Current-induced magnetization switching of BTO↓ and BTO↑ devices.

a, b RH-I loops at various in-plane magnetic fields along the current direction for BTO↓ and BTO↑ devices, respectively. The critical currents evaluated from a and b are plotted in c and d as a function of the in-plane magnetic field. e Calculated anisotropy magnetic field from the harmonic measurements for both devices. The inset shows a typical procedure to obtain the anisotropy field. f Magnetization switching efficiency for both devices as a function of temperature

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