Fig. 3: TaOy/NP TaOx memristor array.
a Top-view SEM image of a 16 × 16 crossbar array. b Statistical histograms of the ION, IOFF, ISneak, and S.C for 64 cells in the arrays. c Rearranged 4 × 16 distribution maps and (d) statistical histograms of ION, IOFF, ISneak, and S.C on a logarithmic scale, respectively. The switching parameters (ION, IOFF, ISneak and S.C) were obtained after a DC voltage sweep of |VS| = 10 V for each cell. e I–V switching curves in the selected 2 × 2 array; a selected cell (blue box) and unselected cells (red box). f, g Histograms of the OFF currents at Vr = 5 V of the selected cell in the 2 × 2 array when the switching states of the unselected cells are in OFF or ON states
