Fig. 1 | NPG Asia Materials

Fig. 1

From: Phonon-assisted carrier transport through a lattice-mismatched interface

Fig. 1

Images of a FET device with thickness-dependent MoS2 isotype heterojunction with graphene electrodes and Pd metal pads. Our surface-potential measurement suggests that work-function value increases with thickness of MoS2 layer. Schematics for b NSJ device and c LMJ device indicating the presence of junction resistance in addition to each contact resistance for layers 1 and 2. Current–voltage relationship at various back gate voltages for d NSJ and e LMJ

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