Fig. 4
From: Phonon-assisted carrier transport through a lattice-mismatched interface
a The transfer curve of MoS2 homojunction transistor (inset). The mobility attenuation factor, θ, with back gate bias. b Sum of contact resistance and junction resistance for various homojunction devices extracted using Y-function analysis. c Device image designed to separate junction resistance from contact resistance. Contact resistance was determined by measuring a pair of electrodes on the same MoS2 layer (1a–1b, 2a–2b, and 3a–3b). d Extracted junction resistance for NSJ and LMJ cases
