Fig. 5: Energy-band diagrams for MoS2
From: Phonon-assisted carrier transport through a lattice-mismatched interface
a NSJ, and b LMJ. c The junction barrier height for NSJ, LMJ, and intrinsic MoS2. The junction barrier height at the NSJ interface is higher than the junction barrier height at the LMJ interface. The drain current–voltage curves with various temperatures from 77.4 to 300 K for d NSJ device, e LMJ device, and f intrinsic MoS2 device, (inset) drain current versus temperature at various drain-source biases
