Fig. 6
From: Phonon-assisted carrier transport through a lattice-mismatched interface
a Schematic of FET devices with and without a thick MoS2 contact between thin MoS2 channel and Pd electrodes. b Optical image of FET device comprising two-layer (green dotted line) and six-layer (orange dotted line) MoS2. Energy-band diagrams for c thin MoS2/metal junction and d thin MoS2/thick MoS2/metal junction. One high Schottky barrier can be split into two low barriers via application of thick MoS2 contacts. ID–VG transfer curves for e device 1 and f device 2 (insets show corresponding ID–VD output curves)
