Fig. 10: Flexible/stretchable transistors from electrospun nanofibers.
a Schematic illustration of the semiconducting NW FET. Top left: chemical structure of the semiconducting NW. Top right: microscopy images of the semiconducting NW. b Schematic illustration of the fabrication process of a stretchable transistor with the serpentine semiconducting NW. Insets are microscopy images of the semiconducting NW before and after stretching. Mobility and maximum drain current under c various strains and d repeated stretching cycles of 100% strain in the channel length direction. e Mobility and maximum drain current under a width-directional strain and after strain release at various strains (modified from ref. 53, copyright 2018 Wiley-VCH).
