Fig. 11: Flexible/stretchable transistors from electrospun nanofibers.

a Schematic illustration of the transistor. The S/D electrodes made of Au nanosheets are transferred to the electrospun SBS nanofiber mat, and P3HT electrospun nanofibers are directly collected in between. The ion-gel dielectric layer is formed and bridges the S/D electrodes. The gate electrode is then fabricated by transferring the Au nanosheets to the dielectric layer. b SEM images of the device. c Photograph showing the device array at a strain of 70%. d Changes in the transfer curves under repeated stretching at 70% strain (modified from ref. ⁶⁵, copyright 2014 Wiley-VCH).