Fig. 7: Hall mobilities of carriers in halide perovskites. | NPG Asia Materials

Fig. 7: Hall mobilities of carriers in halide perovskites.

From: Electron-phonon interactions in halide perovskites

Fig. 7

a Reported Hall mobility of Pb- and Sn-based halide perovskites. (filled circle: MAPbBr3;67,72,73,74,75,76,77,78,79 open circle: MAPbI3;66 filled square: FASnI3;95 filled diamond: MASnI3;95 filled triangle: CsSnI395,96) b The sample used in the AC photo-Hall measurement and the I–V curves with and without the rubrene interlayer. c Electron and hole mobilities in MAPbBr3 as a function of the photocarrier density79. d Dependence of the carrier mobility on the carrier density in GaN samples with different dislocation defect densities. Panels b, c are adapted from ref. 79, licensed under CC BY 4.0. Panel d is adapted with permission from ref. 98, copyright 1998, AIP.

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