Fig. 5: Enhanced light emission of Si-based QLEDs under external pressure and the mechanism of the strain coupling effect. | NPG Asia Materials

Fig. 5: Enhanced light emission of Si-based QLEDs under external pressure and the mechanism of the strain coupling effect.

From: Tuning the light emission of a Si micropillar quantum dot light-emitting device array with the strain coupling effect

Fig. 5

a Measurement system for enhanced light emissions. b Enhancement factor E of the Si-based QLED under different external pressures. c Dependence of the current of the device on the externally applied pressure under a 1 V bias. d Schematic of the device equivalent circuit.

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