Fig. 4: Validation of monochromatization effect with the insulating Al2O3 layer. | NPG Asia Materials

Fig. 4: Validation of monochromatization effect with the insulating Al2O3 layer.

From: Perovskite quantum dot-induced monochromatization for broadband photodetection of wafer-scale molybdenum disulfide

Fig. 4: Validation of monochromatization effect with the insulating Al2O3 layer.The alternative text for this image may have been generated using AI.

a Schematic representations of PQD/MoS2 and PQD/Al2O3/MoS2 structures and electrical isolation used to validate the monochromatization effect of PQDs. b, c Representative TEM images of PQDs/MoS2 with Al2O3 interfacial layers for electrical isolation. d STEM image and e an EDS elemental map for all elements in PQDs/Al2O3/MoS2. f Spatially resolved XPS map (6 × 6 mm2) acquired from the Al 2p (EB = 74.9 eV) core level spectrum of the Al2O3/MoS2 layers. g Spatial homogeneity of the leakage current values of Au/Cr/Al2O3/MoS2/P++-Si devices (25 devices). h Plots of the relationship between leakage current and resistance of the device as functions of the applied voltage. i Optical transmittance of 5-nm-thick Al2O3 on quartz and (inset) transmittance values at 254, 365, and 532 nm. Time-dependent photocurrent of electrically isolated PQD/Al2O3/MoS2-based photodetectors under periodic illumination using photons with wavelengths of j 254, k 365, and l 532 nm.

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