Fig. 2: Interface characterization of the SrRuO3/Ba0.5Sr0.5TiO3/SrRuO3 capacitor.

a, c, e Cross-sectional HAADF-STEM images for capacitors with SrRuO3 electrodes grown at 2, 5, and 10 Hz, respectively; the insets show the FFT pattern of each layer. b, d, f HAADF intensity profiles for sites A and B, which were gathered from high-magnification HAADF-STEM images of the devices fabricated at 2, 5, and 10 Hz, respectively. g A- and h B-site peak intensities extracted from the HAADF intensity profiles as a function of the number of unit cells.