Fig. 5: Infrared photodiodes based on InAs and InAs:Zn QDs.
From: Chemically and electronically active metal ions on InAs quantum dots for infrared detectors
a Energy band diagrams and schematics of the IR photodiode device structures containing ITO/ZnO/QDs/MoO3/Au (with an active area of 3 mm × 3 mm); b electrical characteristics of bare InAs QD- and InAs:Zn QD-photodiodes versus the photocurrent during illumination at 1050 nm. The inset shows linear plots of the dark current versus the bias for both diodes; c bias-dependent photocurrent density of the InAs:Zn QD-based photodiodes with different optical power densities under illumination with 1050 nm infrared light, and the inset shows a magnified graph of the optical power density from 0 to 3 mA/cm2, d responsivities of InAs and InAs:Zn QDs as a function of the applied bias at 1050 nm for different power densities; e frequency dependence of the noise current spectral density at −0.5 V, and f the detectivity for 1050 nm light at 1 mW/cm2 and 1 kHz.
