Fig. 2: Characteristics of the scaled-down three-terminal device. | NPG Asia Materials

Fig. 2: Characteristics of the scaled-down three-terminal device.

From: Zero-dimensionality of a scaled-down VO2 metal-insulator transition via high-resolution electrostatic gating

Fig. 2

a–c Temperature dependence of the drain current (ID) in the three-terminal devices with different channel lengths (L), 240 nm, 490 nm, and 50 μm, respectively. The gate voltage (VG) is set to zero, and the drain voltages (VD) are set to 0.02 V, 0.02 V, and 0.005 V, respectively. d–f Transfer characteristics (ID vs. VG) and gate leakage characteristics (IG vs. VG) of the three-terminal devices with different L values. Panel f is adapted from ref. 16 with permission (license number 5438180614733). The measurement temperatures are 322.8 K, 322.8 K, and 323.5 K, respectively.

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