Fig. 2: XTEM images and EDS mapping data of Cu/c-Si and Cu/a-Si interfaces. | NPG Asia Materials

Fig. 2: XTEM images and EDS mapping data of Cu/c-Si and Cu/a-Si interfaces.

From: Multifilamentary switching of Cu/SiOx memristive devices with a Ge-implanted a-Si underlayer for analog synaptic devices

Fig. 2

a, b XTEM data of Cu silicide formed at the c-Si or at the a-Si interface, respectively. The figure below shows an enlarged image of the XTEM of the interface. The lattice distance was extracted from a high-resolution XTEM image of the silicide formed at the Cu/c-Si interface. c, d EDS mapping data for the areas indicated by dotted lines in (a) and (b), respectively. O, Si, and Cu were selected as the detection elements.

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