Fig. 6: Synaptic weight potentiation and depression for the HC device. | NPG Asia Materials

Fig. 6: Synaptic weight potentiation and depression for the HC device.

From: Multifilamentary switching of Cu/SiOx memristive devices with a Ge-implanted a-Si underlayer for analog synaptic devices

Fig. 6

a Graph of the potentiation and depression pulses applied to the HC device. The voltages for the potentiation and depression pulses were applied at 11 V and −8 V, respectively, for 10 μs. b Conductance update with varying pulse numbers of 20, 50, 100, and 200. c Learning accuracy of the hardware analog neuromorphic system based on the analog memristor. The conductance numbers of the analog memristor were 20, 50, 100, and 200. The accuracy of the expected device is indicated by 500 and 1000 trials.

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