Fig. 7: Retention characteristics for the HC device with varying pulses. | NPG Asia Materials

Fig. 7: Retention characteristics for the HC device with varying pulses.

From: Multifilamentary switching of Cu/SiOx memristive devices with a Ge-implanted a-Si underlayer for analog synaptic devices

Fig. 7

a Conductance decay curves appearing after repeated voltage for the HC device (11 V, 10 µs). The number of pulses applied was 50, 100, 200, 500 and 1000. A read pulse of 1 V was applied 2000 times. b Remaining conductance after memory loss was extracted from each decay curve by comparing it with the initial conductance and expressed as a percentage value. This value varied depending on the maximum conductance value in the corresponding decay curve.

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