Fig. 8: Multi-filamentary swithing behaviors of the memristive devices. | NPG Asia Materials

Fig. 8: Multi-filamentary swithing behaviors of the memristive devices.

From: Multifilamentary switching of Cu/SiOx memristive devices with a Ge-implanted a-Si underlayer for analog synaptic devices

Fig. 8

a Current–voltage characteristics of the HC Cu-based bilayer device, which vary with the via-hole size. b Via-hole size vs. resistance of the Cu-based bilayer device, where the resistance value was determined at 1 V. c Schematic diagram and cross-sectional view of the device, obtained through XTEM photos. FFT images were extracted from high-resolution TEM images to confirm that the shapes of the clusters were evenly distributed in the SiOx layer. d Morphologies in which the device in the set state changes over time; STM and LTM refer to short time and long time, respectively.

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