Fig. 2: Field-free SOT switching of the devices prepared by oblique angle deposition. | NPG Asia Materials

Fig. 2: Field-free SOT switching of the devices prepared by oblique angle deposition.

From: The central role of tilted anisotropy for field-free spin–orbit torque switching of perpendicular magnetization

Fig. 2

a Circuit setup for field-free SOT switching with a write current pulse of \({I}_{{\rm{write}}}\). b Representative field-free current-induced switching loops for the device prepared by \({\theta }_{{\rm{dep}}}=0^\circ ,40^\circ\) and \(\alpha =0^\circ ,180^\circ\). c Representative consecutive switching sequence of a \({\theta }_{{\rm{dep}}}=40^\circ\), \(\alpha =0^\circ\) device with \({I}_{{\rm{write}}}\) set as 7 mA. d Switching probability (\({P}_{{sw}}\)) as a function of \({I}_{{\rm{write}}}\) for devices prepared under different \({\theta }_{{\rm{dep}}}\).

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