Table 1 Summary of progress on defect passivation with black phase CsPbI₃.

From: Phase stabilization of cesium lead iodide perovskites for use in efficient optoelectronic devices

Method to reveal trap density	Materials	Pristine trap density (cm⁻³)	Trap density after passivation(cm⁻³)	Passivating solutions	References
SCLC	α-CsPbI₃	1.73 × 10¹⁵	2.49 × 10¹⁴	hexaoxacyclooctadecane ether surface passivation	¹⁴¹
TAS	γ-phase CsPbI_3-xBr_x	n_e = 1.29 × 10¹⁶ n_h = 1.83 × 10¹⁵	n_e = 1.17 × 10¹⁶ n_h = 1.78 × 10¹⁵	Br doping	¹⁰⁵
SCLC	α-CsPbI₃ QDs	1.9 × 10¹²	8.4 × 10¹¹	2-Aminoethanethiol surface passivation	¹⁴²
SCLC	γ-phase CsPbI₃	2.02 × 10¹⁶	8.75 × 10¹⁵	Phenyl ligands surface passivation	¹⁴³
SCLC	α-CsPbI₃	3.7 × 10¹⁵	2.4 × 10¹⁵	(adamantan-1-yl) methanammonium Surface passivation	¹⁴⁴
SCLC	γ-CsPbI₃	9.2 × 10¹⁵	5.2 × 10¹⁵	(Adamantan-1-yl) Methanammonium surface passivation	¹³⁴
SCLC	β-CsPbI₃	n_e = 3.7 × 10¹⁵ n_h = 4.7 × 10¹⁵	n_e = 2.5 × 10¹⁵ n_h = 4.3×10¹⁵	Light soaking	¹⁴⁵
SCLC	α-CsPbI₃ QDs	1.93 × 10¹⁶	1.14 × 10¹⁶	Glycine surface passivation	¹⁴⁶
SCLC	α-CsPbI₃	2.7 × 10¹⁶	9.2 × 10¹⁵	YbCl₃ additives surface passivation	¹⁴⁷
SCLC	α-CsPbI₂Br	9.57 × 10¹⁶	8.35 × 10¹⁶	Incorporation of polyethylene glycol	¹²¹
SCLC	α-CsPbI_3-xBr_x	n_e = 0.9 × 10¹⁴ n_h = 0.85 × 10¹⁴	n_e = 0.7 × 10¹⁴ n_h = 0.64 × 10¹⁴	GA₂PbI₄ surface passivation	¹²³
SCLC	β-CsPbI_3-xBr_x	2.25 × 10¹⁵	4.76 × 10¹⁴	DTABr passivation	¹²⁴
SCLC	α-CsPbI₃	n_e = 9.71×10¹⁵	n_e = 4.04 × 10¹⁵	Ti₃C₂F_x QDS interface passivation	¹²⁵
SCLC	α-CsPbI₃	n_e = 4.25×10¹⁵	n_e = 1.62 × 10¹⁵	Zwitterion salt passivation	¹¹⁰
SCLC	γ-CsPbI₃	n_e = 1.79×10¹⁵	n_e = 9.63 × 10¹⁴	Vacuum thermal annealing	¹⁴⁸
SCLC	γ-CsPbI₃ (NCs)	n_e = 4.54×10¹⁵	n_e = 3.61 × 10¹⁵	GA₂CO₃ surface passivation	¹³⁰
SCLC	γ-CsPbI₃ (QDs)	n_e = 0.64×10¹⁵	n_e = 0.5×10¹⁵	Choline ligands and 2-pentanol solvent	¹³¹
SCLC	β-CsPbI₃ (QDs)	0.62×10¹⁵	0.34×10¹⁵	(CH₃)₃SI Lewis acid passivation	¹³²
SCLC	γ to β-CsPbI₃	2.09×10¹⁶	1.84×10¹⁶	PEA₂PbI₄ substrate	¹⁴⁹
SCLC	γ-CsPbI₃	7.89×10¹⁶	5.41×10¹⁶	Formamidine acetate	¹⁵⁰
SCLC	β-CsPbI₃	n_h = 7×10¹⁵	n_h = 4.02×10¹⁵	Incorporation of 3, 5-difluorobenzoic acid hydrazide	¹⁰⁷
SCLC	γ-CsPbI₃	n_e = 2.48×10¹⁶	n_e = 1.95×10¹⁶	Ge doping	¹⁵¹
TAS	β-CsPbI₃	n_h = 5.96×10¹⁵	n_h = 3.83×10¹⁵	1,4-butanediamine surface passivation	¹⁵²
SCLC	β-CsPbI₃	9.51×10¹⁵	6.19×10¹⁵	4-aminothiophenol incoporation	¹⁰⁹
SCLC	γ-CsPbI₃	n_h = 1.66×10¹⁵	n_h = 7.39×10¹⁴	Propylamine hydrochloride surface treatment	¹⁵³
SCLC	γ-CsPbI₃	n_e = 4.12×10¹⁵	n_e = 1.4×10¹⁵	Phenyltrimethylammonium iodide	¹²⁶
TAS	γ-CsPbI₃	2.07×10¹⁶	1.79×10¹⁶	Dimethylamine acetate	¹⁰⁸
SCLC	γ-CsPbI₃	n_e = 7.44×10¹⁵	n_e = 4.76×10¹⁵; n_e = 2.97×10¹⁵	2,2-dithienylketone; (1,2-di(thiophen-2-yl)ethane- 1,2-dione	¹²⁷
SCLC	γ-CsPbI₃	n_e = 2.94×10¹⁵	n_e = 0.65×10¹⁵	[6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and 2-fluoro-1,4-phenylenediammonium iodide interface passivation	¹⁵⁴

SCLC and TAS are abbreviations for space-charge-limited current and thermal admittance spectroscopy, respectively.

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Table 1 Summary of progress on defect passivation with black phase CsPbI₃.

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