Fig. 1: Voltage (electric-field) modulation of antiferromagnetic spin switching field.
From: Giant gate modulation of antiferromagnetic spin reversal by the magnetoelectric effect
a Schematic of a device structure of magnetoelectric Cr2O3 equipped with Pt gate electrodes. At the interface between the top Pt heavy metal layer and the Cr2O3 antiferromagnetic layer, boundary magnetization is present due to the built-in electric field in conjunction with magnetoelectricity. The voltage (electric field) impacts the bulk spin state via the magnetoelectric effect. In the figure, the equivalent electrical circuit for the transport measurements is also depicted. b Anomalous Hall resistance Rxy as a function of magnetic field μ0H under an applied gate voltage VG. The measurement temperature was 240 K. The black, blue and red lines represent the curves for VG = 0, −0.3 and +0.3 V, respectively. c μ0HSW as a function of VG and the electric field E (refer to the top axis). The open and closed circles represent the curves for the different devices fabricated from identical films. The red and blue symbols represent the μ0HSW in the ascending and descending branches of the Rxy–H curve in (b), respectively. d, e Rxy and leakage current |I| as a function of VG at a constant magnetic field of μ0H = −0.58 T. The results are shown for the film with tCr2O3 = 8 nm. The arrows in (d) represent the sweep direction of VG (E). f Modulation efficiency of the switching field, Δμ0HSW/ΔE (closed symbol) and −2μ0Keff·α−1·Ε0−2 (open symbol) derived in Eq. (4).
