Fig. 3: Electrical transport characteristics of tBLG FET devices.
From: Twist angle-dependent transport properties of twisted bilayer graphene
a Optical microscopy image of an array of tBLG FET devices. The color of the dashed circle corresponds to the twist angle range. b, c Raman intensity mapping images of the G-peak (1500–1700 cm−1) and 2D-peak (2600–2800 cm−1), respectively. The scale bar in (a–c) is 10 μm. d Representative electrical transport characteristics of the tBLG FETs demonstrated in (a–c) for specific twist angle regimes. All tBLG channels were designed to be 5 × 5 μm2 with Au/Cr metallic contacts. Twist angle dependence of the gate voltage at the charge neutral point (CNP) (e), residual carrier density at the CNP (f), resistance at the CNP (g), and effective mobility (h) of all the tBLG FET devices in the three-device array sets. Each square point represents the mean value for a particular angle range. The x-axis and y-axis error bars represent the standard deviations of the values.
