Fig. 4: Surface potential and work function analysis of the L-BG, M-BG, and H-BG devices.
From: Twist angle-dependent transport properties of twisted bilayer graphene
Scanning Kelvin probe microscopy (SKPM) surface potential results (30 × 30 μm scan) and line profiles of the tBLG FET device channels of L-BG (a), M-BG (b), and H-BG (c). The white dashed line in the surface potential result indicates the position of the line profile. The line profile intersects the tBLG channel and Au electrodes on both sides. d Work function (Φ) calculated from the SKPM surface potential and Fermi energy (EF) calculated from the VCNP through FET measurements. e Intrinsic work function (Φ0 = Φ – EF) calculated from experimental Φ and EF values and the theoretically calculated work function model. f Energy band diagram showing the relationship between Φ, eΔV, EF, and Φ0 at L-BG, M-BG, and H-BG.
