Fig. 3: Lattice strain of epitaxial MgO tunnel barrier.
From: Dielectric constant of MgO tunnel barrier with epitaxial strain
a In-plane 2θχ/ϕ XRD patterns of samples with tMgO = 4.0, 6.0, 8.0, and 10.0 nm along the MgO (200) plane. b MgO thickness dependence of the lattice parameter a of the MgO tunnel barrier. c Variation in εr of the MgO tunnel barrier with respect to the lattice parameter a (lower axis) and lattice strain Δa (upper axis).
