Fig. 5: VCMA effect and εr of epitaxial MgO-MTJ with thin MgO tunnel barrier. | NPG Asia Materials

Fig. 5: VCMA effect and εr of epitaxial MgO-MTJ with thin MgO tunnel barrier.

From: Dielectric constant of MgO tunnel barrier with epitaxial strain

Fig. 5

a Schematics of the epitaxial MTJ stack used in the present study. b tMgO dependence of the VCMA coefficient for epitaxial MgO MTJ devices with tMgO = 2.0, 2.5, and 3.0 nm. c tMgO dependence of εr for epitaxial MgO MTJ devices with tMgO = 2.0, 2.5, and 3.0 nm (blue closed circles). The εr of epitaxial MgO MOKE devices are also shown by open circles.

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