Fig. 5
From: High-performance flexible BiCMOS electronics based on single-crystal Si nanomembrane
Electrical characteristics of CMOS inverter and 10-stage ring oscillator. a Output voltage characteristics of a CMOS inverter with V DD = 6 V. b Measured time domain responses of a 10-stage CMOS ring oscillator. Optical microscope images of the inverter and ring oscillator appear in insets
