Fig. 2

Thin-film capacitors, organic transistors, and diodes with printed oxide dielectrics and semiconductors. a Schematic and optical microscope image of capacitors fabricated by utilization of the anodic printing head. Gold contact pads are 500 µm × 500 µm. b Low-leakage current per area is achieved for capacitors with a dielectric thickness of 11 nm even at high electric fields of 360 MVm⁻¹. c High capacitance per area of 740 nFcm⁻² and low dielectric loss for aluminum oxide capacitors. The dielectric constant of the written aluminum oxide is ε_r = 9.2. d Schematic and optical microscope image of organic transistors with gate electrodes and dielectric layers structured by direct writing. e Transfer characteristic of a p-type low-voltage organic transistor on 1.4 µm PET foils. We reach on–off ratios of 1 × 10⁷ (red solid trace), threshold voltages of − 0.72 V and mobilities of 2.3 cm² V⁻¹ s⁻¹ (extracted from the saturation regime, blue solid trace). The leakage currents remain below 10 pA (red dotted line). f Output characteristics of the same transistor. g Schematic of a tantalum oxide diode with circuit diagram and photograph of a full bridge rectifier. Gold contact pads are 500 µm × 500 µm. h Output transients (red solid traces) of the rectifiers measured at 100 mHz and 100 Hz are compared with the sinusoidal input signal (black solid traces). The AC ripple voltage is very small for input frequencies of 100 Hz (see also Fig. S6) owing to parasitic parallel capacitances of the diodes and is fully suppressed when using a 470 µF external smoothing capacitor (solid green transient). i Smoothed output signal as measured at various root-mean-square input voltages and frequencies from 10 Hz to 1 kHz