Fig. 4
From: Direct writing of anodic oxides for plastic electronics
Titanium oxide memristors. a Schematic illustration of the memristor devices with 50 nm titanium oxide layer together with an optical microscope picture. Scale bar: 300 μm. b Current–voltage characteristic of a typical memristor for one (black trace), 10 (red trace), 100 (green trace), and 1000 (blue trace) switching cycles. No significant changes in switching hysteresis are observed. The SET and RESET half-cycles are performed under current control and voltage control, respectively, to reduce power dissipation and improve lifetime. c HRS (high resistive state, ROFF) and LRS (low resistive state, RON) for over 1100 switching cycles, showing no visible degradation. d Long time retention measurements for 6 days (533,060 s). Readout of both LRS and HRS is reliable without visible degradation, ultimately implying that stable memory performance is achievable
