Fig. 2 | npj Flexible Electronics

Fig. 2

From: Optically invariant InGaN nanowire light-emitting diodes on flexible substrates under mechanical manipulation

Fig. 2

Process flow of the double-transfer process. a The NW LED device is bonded to a temporary receptor substrate, b the sapphire substrate is detached from the NW devices by illuminating a pulsed 266-nm Nd:YAG laser through the sapphire to decompose the GaN at the substrate interface, c a metallic Ag adhesive bonds the GaN NW devices/receptor substrate structure onto a 175-μm-thick PET flexible substrate, and d the NW devices are transferred onto the PET by removing the epoxy bond using an acetone bath. e Schematic of the final transferred NW LED device on the PET substrate. f A cross-sectional FE-SEM image of an array of GaN NW LED devices transferred onto the flexible substrate. The gold and blue colors represent the ITO top contact and GaN NWs, respectively. Scale bar = 1 μm

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