Fig. 5: Physical model of thermal noise.
From: Noise and detectivity limits in organic shortwave infrared photodiodes with low disorder
a Normalized thermally generated carrier concentration as a function of the effective bandgap or the bandtail disorder in organic photodiodes. The inset shows the parameters for calculating the carrier concentration indicated by the shaded area. To offer different perspectives, b and c display the data in a as contour plots. d The predicted thermal noise from our model. The dots indicate the measured noise in photodiodes with different acceptors. The horizontal bars on the dots represent ±1 meV uncertainties in the measured ΔE values. The color bands show the predicted noise with ECT held at the indicated values within ±0.01 eV. e The upper bound for detectivity and noise-equivalent power for organic infrared photodiodes with disorder. The red dotted line shows the detectivity of a background-limited infrared photodiode with the background at 300 K and the field of view of 180°.
